Bachelorarbeit, 2017
58 Seiten, Note: 4.00
1. INTRODUCTION
1.1 Research Problem
1.2 Research Plan
2. LITERATURE REVIEW
2.1 Literature Review
3. THEORETICAL BACKGROUND
3.1 Energy Band Theory
3.2 Semiconductors and their Characteristics
3.3 Direct/Indirect Band Gap Semiconductors
3.4 II-VI Compound Semiconductors
3.5 Zinc Sulphide
3.6 Exchange Interaction
3.6.1 Direct Exchange Interaction
3.6.2 Indirect Exchange Interaction
3.6.2.1 Double Exchange Interaction
3.7 Jahn Teller Effect
3.8 Techniques for Computational Study
3.9 Density Functional Theory
3.9.1 Many-Body Problems in Solids
3.9.2 Hohenburg-Kohen Theorems
3.9.2.1 First Hohenburg Kohen Theorem
3.9.2.2 Second Hohenburg Kohen Theorem
3.9.3 Kohan-Sham Equation
3.9.4 Exchange Correlational Functional
3.9.5 Local Density Approximation (LDA)
3.9.6 Local Spin Density Approximation (LSDA)
3.9.7 Generalized Gradient Approximation (GGA)
3.9.8 LDA and GGA with Hubbard Correction
3.9.9 Hybrid Functional
3.9.10 Tran-Blah Modified Becke Johnson Potential (TB-mBJ)
3.10 Basis Sets
3.10.1 Slater-Type Orbital (STO)
3.10.2 Gaussian-Type Orbital (GTO)
3.11 Amsterdam Density Functional (ADF)
4. COMPUTATIONAL TECHNIQUES
4.1 ADF-BAND
4.2 Brief Introduction to ADF-BAND
4.2.1 Features of ADF-BAND
4.2.2 Operating System for ADF-BAND
4.2.3 Electronic and Structural Parameters using ADF-BAND
4.2.4 Construction of wurtzite ZnS structure with ADF-BAND
4.2.5 Construction of a unit cell of ZnS
4.3 Computational Aspect
5. RESULTS AND DISCUSSIONS
5.1 Electronic Properties
5.1.1 Chromium Doped Zinc Sulphide: 16 atoms
5.1.2 Cr Doped ZnS: 32 atoms
5.1.3 Cr Doped ZnS: 64 atoms
5.2 Conclusion
The research aims to investigate the electronic and magnetic properties of chromium-doped wurtzite zinc sulphide (ZnS) using density functional theory (DFT) methods, specifically focusing on the material's potential in spintronics applications.
3.6.1 Direct Exchange Interaction
When electrons of neighboring atoms interact with each other without any involvement of third party atom, then that type of interaction is direct. When electrons with same spin are kept at a distance then this reduces the coulomb repulsion, which is also the consequences of Pauli’s exclusion principle. When interaction is considered for transition metal doped semiconductors, then 3d or 4f orbitals exhibit high degree of localization and are very far away from the nucleus. Thus, for such type of materials direct interaction has negligible significance, and indirect interaction encounters in the system [37].
CHAPTER 1: INTRODUCTION: Outlines the significance of semiconductor materials in modern electronics and introduces the specific focus on chromium-doped ZnS in the wurtzite phase for spintronic applications.
CHAPTER 2: LITERATURE REVIEW: Reviews previous experimental and computational studies on the electronic structure and band gap properties of zinc sulphide and doped systems.
CHAPTER 3: THEORETICAL BACKGROUND: Details the fundamental physics, including energy band theory, density functional theory (DFT), and the computational methods used to model these properties.
CHAPTER 4: COMPUTATIONAL TECHNIQUES: Describes the specific ADF-BAND software package, the construction of supercells, and the methodology employed for simulating chromium-doped ZnS.
CHAPTER 5: RESULTS AND DISCUSSIONS: Presents the findings regarding total and partial density of states (DOS) for various supercell sizes, discussing electronic behavior, band gaps, and magnetic properties.
Zinc Sulphide, Chromium Doped, Density Functional Theory, DFT, GGA, Hubbard Correction, Spintronics, Ferromagnetism, Half Metallic, Band Gap, Wurtzite, Semiconductor, p-type, Exchange Interaction, ADF-BAND
The research focuses on analyzing the electronic and magnetic properties of chromium-doped wurtzite zinc sulphide to evaluate its suitability for spintronic devices.
The work explores semiconductor doping, computational physics (specifically DFT), magnetic exchange interactions, and the role of localized 3d states in determining material properties.
The primary objective is to demonstrate that chromium-doped wurtzite ZnS exhibits half-metallic and ferromagnetic properties, identifying it as a promising candidate for spintronics.
The study relies on density functional theory (DFT) using the ADF-BAND software, incorporating GGA and GGA+U functionals for optimized calculation results.
The main body covers the theoretical basis of band structures, the methodology for computational modeling of doped systems, and detailed discussions on the density of states for different atom concentrations.
Key terms include ZnS, chromium doping, DFT, spintronics, ferromagnetism, half-metallicity, GGA+U, and band gap engineering.
The Hubbard correction increases the calculated band gap and effectively separates the spin-up and spin-down channels for 3d states, providing a more accurate representation of the material's magnetic properties.
Jahn Teller Distortion is crucial as it removes state degeneracy, stabilizes orbitals, and plays a key role in splitting states, which directly influences the material's magnetic behavior.
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